Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

Tensile-strained InGaAs and GaAsSb layers have potential as strain-compensation for tunneling field-effect-transistors containing compressively strained channel layers. Here, we compare structural photoluminescence properties between 1% tensile-strained grown on InP substrates. Surface roughening the layer with increasing thickness proceeded much more slowly than layer. Differences in morphological evolution were strongly reflected experimental results obtained by x-ray diffraction measurements. Cross-sectional TEM observations revealed that surface morphologies of depend whether facets are formed or not.